FQB5P10TM
MOSFET P-CH 100V 4.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® series FQB5P10TM is a P-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) rating of 4.5 A at 25°C (Tc). With a low on-resistance (Rds On) of 1.05 Ohms maximum at 2.25 A and 10 V drive voltage, it minimizes conduction losses. The device offers a maximum gate charge (Qg) of 8.2 nC at 10 V and an input capacitance (Ciss) of 250 pF at 25 V. The FQB5P10TM is packaged in a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management with a power dissipation of 40 W at 25°C (Tc). Its operating temperature range spans from -55°C to 175°C. This MOSFET is commonly utilized in power switching, motor control, and power supply designs across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
