FQB5N60CTM-WS
MOSFET N-CH 600V 4.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB5N60CTM-WS is a QFET® series N-Channel Power MOSFET designed for demanding applications. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C, with a maximum power dissipation of 100W. The Rds On is specified at a maximum of 2.5 Ohm at 2.25A and 10V gate drive. Key parameters include a gate charge (Qg) of 19 nC and input capacitance (Ciss) of 670 pF at 25V. This MOSFET utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK surface mount package, supplied on tape and reel. It finds application in power supply units and motor control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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