FQB5N50CFTM
MOSFET N-CH 500V 5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB5N50CFTM is a N-Channel FRFET® series MOSFET designed for high-voltage applications. This surface mount component, housed in a TO-263 (D2PAK) package, offers a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) capability of 5 A at 25°C. Key electrical characteristics include a maximum on-resistance (Rds On) of 1.55 Ohms at 2.5 A and 10 V, with a gate charge (Qg) of 24 nC at 10 V. The device exhibits a maximum power dissipation of 96 W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply, lighting, and industrial control applications.
Additional Information
Series: FRFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V |
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