FQB50N06TM
MOSFET N-CH 60V 50A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQB50N06TM is a 60V N-Channel Power MOSFET designed for demanding applications. This component offers a continuous drain current capability of 50A at 25°C (Tc) and a low Rds(on) of 22mOhm at 25A, 10V. Featuring a Vds of 60V and a gate drive voltage of 10V for optimal Rds(on) performance, it is suitable for power switching and management circuits. The device exhibits a gate charge of 41nC (max) at 10V and an input capacitance of 1540pF (max) at 25V. Packaged in a TO-263-3, D2PAK surface mount configuration, it supports efficient thermal management with a maximum power dissipation of 120W (Tc). The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial power supplies, automotive systems, and motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1540 pF @ 25 V |
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