FQB50N06LTM
MOSFET N-CH 60V 52.4A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB50N06LTM is a QFET® series N-Channel Power MOSFET designed for high-performance switching applications. This component offers a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) capability of 52.4A at 25°C (Tc). Featuring a low on-resistance (Rds On) of 21mOhm maximum at 26.2A and 10V Vgs, it minimizes conduction losses. The device supports a gate-source voltage range of ±20V, with a threshold voltage (Vgs(th)) of 2.5V maximum. Key parameters include a gate charge (Qg) of 32 nC maximum at 5V Vgs and input capacitance (Ciss) of 1630 pF maximum at 25V Vds. With a maximum continuous drain current of 52.4A (Tc) and a continuous drain current of 3.75W (Ta) or 121W (Tc) power dissipation, it is suitable for demanding industrial and automotive power management solutions. The FQB50N06LTM is supplied in a TO-263-3, D2PAK surface mount package, delivered on tape and reel.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 26.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 121W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
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