FQB4P40TM
MOSFET P-CH 400V 3.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® FQB4P40TM is a P-Channel Power MOSFET in a TO-263 (D2PAK) surface mount package. This device features a drain-source voltage (Vdss) of 400 V and a continuous drain current (Id) of 3.5 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 3.1 Ohm at 1.75 A and 10 V gate-source voltage. Maximum gate charge (Qg) is 23 nC at 10 V, and input capacitance (Ciss) is 680 pF at 25 V. The MOSFET supports a gate-source voltage range of ±30 V and has a threshold voltage (Vgs(th)) of 5 V at 250 µA. Power dissipation capabilities are 3.13 W (Ta) and 85 W (Tc). This component operates across a temperature range of -55°C to 150°C. It is suitable for applications in power factor correction, switch mode power supplies, and general-purpose power switching.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1Ohm @ 1.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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