FQB4P25TM
MOSFET P-CH 250V 4A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® FQB4P25TM: This P-Channel MOSFET offers a 250V drain-source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C (Tc). Featuring a low on-resistance of 2.1Ohm maximum at 2A, 10V, this component is designed for surface mounting within the TO-263 (D2PAK) package. The device supports a gate-source voltage (Vgs) range of ±30V and a threshold voltage (Vgs(th)) of 5V at 250µA. With a power dissipation of 75W at 25°C (Tc), this MOSFET is suitable for applications in industrial power supplies, motor control, and high-voltage switching. The component is supplied on tape and reel.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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