FQB4N90TM
MOSFET N-CH 900V 4.2A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® FQB4N90TM is a 900V N-Channel Power MOSFET designed for high-voltage applications. This device offers a continuous drain current of 4.2A at 25°C (Tc) and features a low on-resistance of 3.3 Ohms maximum at 2.1A, 10V. With a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 1100 pF at 25V, it provides efficient switching characteristics. The FQB4N90TM is packaged in a TO-263 (D2PAK) surface-mount package, enabling robust thermal management with a maximum power dissipation of 140W (Tc). This component finds application in power factor correction, switch mode power supplies, and general high-voltage switching circuits across industrial and consumer electronics. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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