FQB4N50TM
MOSFET N-CH 500V 3.4A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQB4N50TM is a 500 V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a low Rds(on) of 2.7 Ohm maximum at 1.7A and a gate-source voltage of 10V, with a maximum gate charge of 13 nC. The input capacitance (Ciss) is 460 pF at 25 V. It offers a continuous drain current of 3.4A at 25°C (Tc) and a maximum power dissipation of 70W at 25°C (Tc), with 3.13W at 25°C (Ta). The FQB4N50TM is housed in a TO-263 (D2PAK) surface-mount package, suitable for demanding thermal conditions. This MOSFET is commonly utilized in power supplies, lighting, and motor drive circuits across various industrial and consumer electronics sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |
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