FQB3N80TM
MOSFET N-CH 800V 3A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQB3N80TM is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) capability of 3A at 25°C (Tc). With a maximum on-resistance (Rds On) of 5 Ohm at 1.5A and 10V, it offers efficient switching characteristics. The gate charge (Qg) is rated at 19 nC (max) at 10V, and input capacitance (Ciss) is 690 pF (max) at 25V. The FQB3N80TM utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK surface mount package, facilitating integration into compact designs. It operates across a wide temperature range of -55°C to 150°C (TJ). Typical applications include power factor correction, lighting, and switched-mode power supplies.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |
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