FQB3N25TM
MOSFET N-CH 250V 2.8A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQB3N25TM is an N-Channel Power MOSFET designed for demanding applications. This device features a 250V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.8A at 25°C (Tc). With a low on-resistance (Rds On) of 2.2 Ohms maximum at 1.4A and 10V Vgs, it offers efficient power switching. The MOSFET exhibits a gate charge (Qg) of 5.2 nC maximum at 10V and an input capacitance (Ciss) of 170 pF maximum at 25V. The FQB3N25TM supports a gate-source voltage (Vgs) range of ±30V and a threshold voltage (Vgs(th)) of 5V maximum at 250µA. It is housed in a TO-263 (D2PAK) surface mount package, suitable for automated assembly. Power dissipation is rated at 3.13W (Ta) and 45W (Tc). This component finds application in power supply units, motor control, and power management systems across various industrial and consumer electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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