FQB34P10TM-F085C
MOSFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQB34P10TM-F085C is a P-Channel MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 33.5A at 25°C (Tc). The Rds On is specified at a maximum of 60mOhm at 16.75A and 10V Vgs. Key parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 2910 pF at 25V. Power dissipation is rated at 3.75W (Ta) and 155W (Tc). The device is packaged in a TO-263 (D2PAK) surface mount configuration, suitable for high-power density designs. This MOSFET is AEC-Q101 qualified and carries an automotive grade, making it appropriate for use in automotive systems, industrial power control, and high-efficiency power management solutions. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 16.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 155W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2910 pF @ 25 V |
| Qualification | AEC-Q101 |
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