FQB34P10TM-F085
MOSFET P-CH 100V 33.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's QFET® FQB34P10TM-F085 is a P-Channel Power MOSFET engineered for demanding applications. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 33.5A at 25°C (Tc), with a maximum power dissipation of 155W (Tc) in a TO-263 (D2PAK) surface mount package. The low on-resistance of 60mOhm at 16.75A and 10V gate-source drive voltage, combined with a gate charge (Qg) of 110nC at 10V, ensures efficient switching performance. Designed for automotive applications and AEC-Q101 qualified, this MOSFET is suitable for power management, motor control, and power distribution systems in the automotive and industrial sectors. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 16.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 155W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2910 pF @ 25 V |
| Qualification | AEC-Q101 |
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