FQB33N10LTM
MOSFET N-CH 100V 33A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQB33N10LTM is a N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 100V. This device features a continuous drain current (Id) of 33A at 25°C (Tc) and a low Rds On of 52mOhm maximum at 16.5A, 10V. The FQB33N10LTM is packaged in a TO-263 (D2PAK) surface-mount configuration, suitable for high-power applications. Key parameters include a Gate Charge (Qg) of 40 nC maximum at 5V and an Input Capacitance (Ciss) of 1630 pF maximum at 25V. With a maximum power dissipation of 127W at 25°C (Tc), it is designed for demanding thermal management. The operating temperature range is -55°C to 175°C (TJ). This component finds utility in power supply design, motor control, and power switching applications across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 16.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 127W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
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