FQB30N06TM
MOSFET N-CH 60V 30A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB30N06TM is a QFET® series N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 30 A at 25°C (Tc). With a low on-resistance (Rds On) of 40 mOhm maximum at 15 A and 10 V, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 79 W at 25°C (Tc) and 3.75 W at 25°C (Ta). It utilizes a surface mount TO-263-3, D2PAK package for efficient thermal management. Key parameters include a gate charge (Qg) of 25 nC at 10 V and input capacitance (Ciss) of 945 pF at 25 V. This device is suitable for use in power supply, automotive, and industrial control systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 945 pF @ 25 V |
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