FQB30N06LTM
MOSFET N-CH 60V 32A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQB30N06LTM is an N-channel Power MOSFET with a drain-source voltage (Vdss) of 60V. It offers a continuous drain current (Id) of 32A at 25°C (Tc) and a low on-resistance (Rds On) of 35mOhm maximum at 16A and 10V Vgs. This device features a gate charge (Qg) of 20 nC maximum at 5V Vgs and input capacitance (Ciss) of 1040 pF maximum at 25V Vds. The maximum power dissipation is rated at 3.75W (Ta) and 79W (Tc). Packaged in a TO-263-3, D2PAK surface-mount package, the FQB30N06LTM is suitable for applications in power supply, motor control, and industrial automation. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 25 V |
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