FQB2N80TM
MOSFET N-CH 800V 2.4A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQB2N80TM is an N-Channel Power MOSFET from the QFET® series, designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 2.4A at 25°C (Tc). With a maximum on-resistance (Rds On) of 6.3 Ohms at 900mA and 10V gate drive, it offers efficient switching characteristics. The device is packaged in a TO-263 (D2PAK) surface-mount package, suitable for automated assembly. Key parameters include a gate charge (Qg) of 15 nC (Max) at 10V and input capacitance (Ciss) of 550 pF (Max) at 25V. Power dissipation is rated at 3.13W (Ta) and 85W (Tc). Operating temperature range is -55°C to 150°C. This MOSFET is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
