FQB22P10TM-F085
MOSFET P-CH 100V 22A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi QFET® FQB22P10TM-F085 is a P-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 22A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 125mOhm at 11A and 10V gate drive. With a maximum gate charge (Qg) of 50 nC at 10V, it offers efficient switching characteristics. The MOSFET is housed in a TO-263 (D2PAK) surface mount package, facilitating efficient thermal management with a power dissipation of 125W (Tc). Qualifying for AEC-Q101, this component is suitable for automotive applications. It operates across a temperature range of -55°C to 175°C (TJ). Its input capacitance (Ciss) is rated at 1500 pF at 25V.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
