FQB1P50TM
MOSFET P-CH 500V 1.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB1P50TM is a P-Channel QFET® MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 1.5 A at 25°C. With a low Rds On of 10.5 Ohms maximum at 750 mA and 10 V, and a gate charge (Qg) of 14 nC maximum at 10 V, it offers efficient switching characteristics. The MOSFET is housed in a TO-263 (D2PAK) surface mount package, facilitating integration into compact designs. Power dissipation capabilities include 3.13 W (Ta) and 63 W (Tc). This device is suitable for use in power supply units, motor control, and lighting applications where high voltage and reliable switching are critical. The operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5Ohm @ 750mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 63W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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