FQB19N20CTM
MOSFET N-CH 200V 19A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB19N20CTM is an N-Channel Power MOSFET from the QFET® series, designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 19A at 25°C (Tc). With a maximum on-resistance (Rds On) of 170mOhm at 9.5A and 10V Vgs, it minimizes conduction losses. The device boasts a gate charge (Qg) of 53nC at 10V and an input capacitance (Ciss) of 1080pF at 25V. Packaged in a TO-263 (D2PAK) surface mount configuration, it offers robust thermal performance with a maximum power dissipation of 139W (Tc). This MOSFET is suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 139W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
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