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FQB13N10TM

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FQB13N10TM

MOSFET N-CH 100V 12.8A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FQB13N10TM is an N-Channel MOSFET from the QFET® series, designed for high-performance switching applications. This TO-263-3 (D2PAK) surface-mount component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 12.8 A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 180 mOhm at 6.4 A and 10 V, it offers efficient power handling. Key characteristics include a gate charge (Qg) of 16 nC at 10 V and an input capacitance (Ciss) of 450 pF at 25 V. The device supports a gate-source voltage (Vgs) range of ±25 V and operates within an extended temperature range of -55°C to 175°C (TJ). Power dissipation is rated at 3.75 W (Ta) and 65 W (Tc). This component is commonly utilized in power supply units, motor control, and general-purpose power switching within the industrial and consumer electronics sectors. It is supplied in Tape & Reel packaging.

Additional Information

Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12.8A (Tc)
Rds On (Max) @ Id, Vgs180mOhm @ 6.4A, 10V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V

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