FQB13N10LTM
MOSFET N-CH 100V 12.8A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FQB13N10LTM is a QFET® series N-Channel Power MOSFET. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 12.8A at 25°C (Tc). The Rds On is specified at a maximum of 180mOhm at 6.4A and 10V Vgs. The device offers a nominal gate charge (Qg) of 12 nC at 5V Vgs and an input capacitance (Ciss) of 520 pF at 25V Vds. With a maximum power dissipation of 65W (Tc), it is housed in a TO-263 (D2PAK) surface mount package. The operating temperature range is from -55°C to 175°C. This MOSFET is suitable for applications in power supply units, motor control, and general-purpose switching.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 6.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
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