FQB13N06LTM
MOSFET N-CH 60V 13.6A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQB13N06LTM is an N-Channel Power MOSFET in a TO-263 (D2PAK) surface-mount package. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 13.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 110mOhm at 6.8A and 10V, it offers efficient switching characteristics. The gate charge (Qg) is a maximum of 6.4 nC at 5V, and input capacitance (Ciss) is 350 pF at 25V. Power dissipation is rated at 3.75W (Ta) and 45W (Tc). This MOSFET is suitable for applications in power management, industrial automation, and consumer electronics. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 6.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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