FQB12P10TM
MOSFET P-CH 100V 11.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB12P10TM is a P-Channel MOSFET from the QFET® series, designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 11.5A at 25°C (Tc). The Rds On is specified at a maximum of 290mOhm at 5.75A and 10V gate drive. Key characteristics include a gate charge (Qg) of 27 nC (Max) at 10V and input capacitance (Ciss) of 800 pF (Max) at 25V. The device offers a maximum power dissipation of 75W at 25°C (Tc) and 3.75W at 25°C (Ta). Mounted in a TO-263 (D2PAK) package, this MOSFET is suitable for surface mounting and operates within a temperature range of -55°C to 175°C (TJ). This component is commonly utilized in power supply units, motor control, and automotive electronics.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 5.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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