FQB12N60CTM
MOSFET N-CH 600V 12A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQB12N60CTM is a 600V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a continuous drain current capability of 12A at 25°C (Tc) and a low on-resistance (Rds On) of 650mOhm maximum at 6A and 10V Vgs. The FQB12N60CTM offers a significant 225W power dissipation at 25°C (Tc), with a thermal resistance allowing for efficient heat management. Key parameters include a gate charge (Qg) of 63 nC at 10V and input capacitance (Ciss) of 2290 pF at 25V. The MOSFET is housed in a TO-263-3, D2PAK package, suitable for surface mount assembly. This component is commonly utilized in power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 225W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V |
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