FQB11P06TM
MOSFET P-CH 60V 11.4A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's QFET® FQB11P06TM is a P-channel MOSFET designed for demanding applications. This device features a 60V Vds rating and a continuous drain current capability of 11.4A at 25°C (Tc). With a low Rds(on) of 175mOhm maximum at 5.7A and 10V Vgs, it minimizes conduction losses. The TO-263 (D2PAK) surface mount package offers efficient thermal management, with a maximum power dissipation of 53W (Tc). Key parameters include a gate charge of 17nC (max) at 10V Vgs and input capacitance of 550pF (max) at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in power management, automotive, and industrial applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 53W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
