FQB11N40CTM
MOSFET N-CH 400V 10.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQB11N40CTM is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a drain-to-source voltage (Vdss) of 400V and a continuous drain current (Id) of 10.5A at 25°C, with a maximum power dissipation of 135W (Tc). The FQB11N40CTM exhibits a low on-resistance (Rds On) of 530mOhm at 5.25A and 10V drive voltage. Key electrical characteristics include a gate charge (Qg) of 35 nC maximum at 10V and input capacitance (Ciss) of 1090 pF maximum at 25V. This MOSFET is housed in a surface-mount TO-263 (D2PAK) package, suitable for automated assembly processes. It operates across a temperature range of -55°C to 150°C (TJ). Applications for this component include power supplies, lighting, and motor control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 530mOhm @ 5.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 25 V |
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