FQB10N60CTM
MOSFET N-CH 600V 9.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® N-Channel MOSFET, FQB10N60CTM, offers a 600V drain-source voltage with a continuous drain current of 9.5A at 25°C (Tc). This TO-263 (D2PAK) surface-mount device features a maximum on-resistance of 730mOhm at 4.75A and 10V gate-source voltage. Designed with Metal Oxide technology, it boasts a gate charge of 57nC at 10V and input capacitance of 2040pF at 25V. Power dissipation is rated at 3.13W (Ta) and 156W (Tc). Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, lighting, and industrial motor control applications. Packaged in Tape & Reel (TR).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 4.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 25 V |