FQB10N20LTM
MOSFET N-CH 200V 10A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQB10N20LTM is a QFET® series N-Channel Power MOSFET designed for demanding applications. This MOSFET features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 10A at 25°C (Tc). Its low on-resistance (Rds On) of 360mOhm at 5A, 10V, coupled with a gate charge (Qg) of 17nC at 5V, ensures efficient switching performance. The component offers a maximum power dissipation of 87W at 25°C (Tc) and 3.13W at 25°C (Ta). Housed in a TO-263 (D2PAK) surface mount package for effective thermal management, it operates across a temperature range of -55°C to 150°C (TJ). This device is suitable for use in power supply units, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 87W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V |
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