FQAF65N06
MOSFET N-CH 60V 49A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQAF65N06 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 49A at 25°C, with a maximum power dissipation of 86W (Tc). The Rds(On) is specified at 16mOhm (max) at 24.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 65nC (max) at 10V and input capacitance (Ciss) of 2410pF (max) at 25V. The device utilizes Metal Oxide technology and is housed in a TO-3PF package suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly employed in power supply units, motor control, and automotive applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 24.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 25 V |
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