FQAF5N90
MOSFET N-CH 900V 4.1A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FQAF5N90, an N-Channel QFET® MOSFET, offers a 900V drain-source voltage and 4.1A continuous drain current. This device features a low Rds(on) of 2.3Ohm maximum at 2.05A and 10V gate drive. The TO-3PF package facilitates through-hole mounting and supports a maximum power dissipation of 90W at 25°C (Tc). Key parameters include a Ciss of 1550pF maximum at 25V and Qg of 40nC maximum at 10V. Operating temperature ranges from -55°C to 150°C. This component is utilized in applications such as switch mode power supplies and power factor correction.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 2.05A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V |
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