FQAF47P06
MOSFET P-CH 60V 38A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQAF47P06 is a P-Channel Power MOSFET in a TO-3PF package. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 38A at 25°C (Tc). With a maximum Power Dissipation of 100W (Tc) and a low on-resistance of 26mOhm at 19A and 10V Vgs, it is suitable for applications requiring efficient power switching. Key parameters include a Gate Charge (Qg) of 110 nC at 10V and an input capacitance (Ciss) of 3600 pF at 25V. The operating temperature range is from -55°C to 175°C. This component is commonly found in power supply units and motor control systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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