FQAF33N10L
MOSFET N-CH 100V 25.8A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQAF33N10L is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 100V and a continuous drain current capability of 25.8A at 25°C (Tc), this component offers robust performance. The Rds(on) is specified at a maximum of 52mOhm at 12.9A and 10V Vgs. Key parameters include a gate charge (Qg) of 40nC (max) at 5V and input capacitance (Ciss) of 1630pF (max) at 25V. This device supports a wide operating temperature range from -55°C to 175°C (TJ). The TO-3PF package facilitates through-hole mounting and dissipates up to 83W (Tc). Applications for this MOSFET include power supply units, motor control, and industrial automation.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 12.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
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