FQAF22P10
MOSFET P-CH 100V 16.6A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQAF22P10 is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source breakdown voltage (Vdss) of 100V and a continuous drain current (Id) capability of 16.6A at 25°C (Tc). With a low on-resistance (Rds On) of 125mOhm at 8.3A and 10V Vgs, it offers efficient power switching. The device has a maximum power dissipation of 70W (Tc) and is housed in a TO-3PF package for robust thermal management. Key parameters include a gate charge (Qg) of 50 nC at 10V and input capacitance (Ciss) of 1500 pF at 25V. It supports a gate-source voltage (Vgs) range of ±30V and a threshold voltage (Vgs(th)) of 4V at 250µA. This MOSFET is suitable for use in industrial and power control systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 8.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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