FQAF17N40
MOSFET N-CH 400V 12.2A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQAF17N40 is an N-Channel QFET® series MOSFET designed for high-voltage applications, featuring a Drain-to-Source Voltage (Vdss) of 400 V. This through-hole component offers a continuous drain current (Id) of 12.2A at 25°C and a maximum power dissipation of 100W (Tc). The device exhibits a low on-resistance of 270mOhm at 6.1A and 10V Vgs, with a gate charge (Qg) of 60 nC at 10V. Its input capacitance (Ciss) is rated at 2300 pF at 25V. Packaged in a TO-3PF, it operates across a temperature range of -55°C to 150°C. This component is suitable for use in power supply, lighting, and industrial control applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 6.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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