FQAF13N80
MOSFET N-CH 800V 8A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQAF13N80 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 8 A at 25°C (Tc). With a maximum power dissipation of 120 W (Tc) and a drain-source on-resistance (Rds On) of 750 mOhm at 4 A and 10 V, it offers efficient switching performance. The device utilizes Metal Oxide technology and is housed in a TO-3PF package for through-hole mounting. Key parameters include a gate charge (Qg) of 88 nC at 10 V and input capacitance (Ciss) of 3500 pF at 25 V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply, lighting, and industrial applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |