FQAF12N60
MOSFET N-CH 600V 7.8A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQAF12N60 is a 600V N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a continuous drain current capability of 7.8A (Tc) and a maximum power dissipation of 100W (Tc). Key electrical specifications include a low on-resistance of 700mOhm at 3.9A and 10V Vgs, an input capacitance (Ciss) of 1900pF at 25V, and a gate charge (Qg) of 54nC at 10V. The device operates with a Vgs(th) of 5V at 250µA and supports a maximum Vgs of ±30V. Packaged in a TO-3PF for through-hole mounting, the FQAF12N60 is suitable for use in industrial power supplies, lighting, and motor control systems. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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