FQAF11N40
MOSFET N-CH 400V 8.8A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQAF11N40 is a QFET® series N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 400V and a continuous drain current (Id) of 8.8A at 25°C (Tc). With a maximum power dissipation of 90W (Tc), it is suitable for high-power switching and amplification tasks. The Rds On is specified at a maximum of 480mOhm at 4.4A and 10V Vgs. Key parameters include a gate charge (Qg) of 35 nC (max) at 10V Vgs and input capacitance (Ciss) of 1400 pF (max) at 25V Vds. Operating across a temperature range of -55°C to 150°C (TJ), it utilizes a TO-3PF through-hole package. This MOSFET is commonly found in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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