FQA9P25
MOSFET P-CH 250V 10.5A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® FQA9P25 is a P-Channel Power MOSFET designed for demanding applications. This through-hole TO-3P packaged component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 10.5A at 25°C (Tc). With a maximum power dissipation of 150W (Tc), it offers robust performance for power switching and control. Key electrical characteristics include a maximum on-resistance (Rds On) of 620mOhm at 5.25A and 10V Vgs, and a gate charge (Qg) of 38nC at 10V. The input capacitance (Ciss) is rated at a maximum of 1180pF at 25V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in industrial power supplies, motor control, and high-voltage switching applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 620mOhm @ 5.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
