FQA90N15-F109
MOSFET N-CH 150V 90A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQA90N15-F109 is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 90 A at 25°C. With a low on-resistance (Rds On) of 18 mOhm at 45 A and 10 V gate drive, it minimizes conduction losses. The device boasts significant power dissipation capability of 375 W (Tc) and a maximum junction temperature of 175°C, making it suitable for demanding power conversion and motor control circuits. Key parameters include a gate charge (Qg) of 285 nC at 10 V and input capacitance (Ciss) of 8700 pF at 25 V. The FQA90N15-F109 is packaged in a TO-3PN through-hole package, facilitating robust thermal management and system integration in industrial and automotive power systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8700 pF @ 25 V |
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