FQA90N08
MOSFET N-CH 80V 90A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQA90N08 is an N-Channel Power MOSFET from the QFET® series, designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 90 A at 25°C, with a maximum power dissipation of 214 W (Tc). The device exhibits a low on-resistance (Rds On) of 16 mOhm at 45 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 110 nC at 10 V and input capacitance (Ciss) of 3250 pF at 25 V. The FQA90N08 is housed in a through-hole TO-3PN package, facilitating robust board mounting. This MOSFET is suitable for use in power supply, motor control, and industrial automation applications. Operating temperature ranges from -55°C to 175°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
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