FQA8N80C
MOSFET N-CH 800V 8.4A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi QFET® N-Channel Power MOSFET, part number FQA8N80C, offers an 800V drain-to-source voltage (Vdss) and a continuous drain current of 8.4A at 25°C (Tc). This device features a maximum on-resistance (Rds On) of 1.55 Ohms at 4.2A and 10V (Vgs). The TO-3P package facilitates through-hole mounting and supports a maximum power dissipation of 220W (Tc). Key parameters include a gate charge (Qg) of 45 nC at 10V and input capacitance (Ciss) of 2050 pF at 25V. The FQA8N80C is suitable for applications requiring high voltage switching, commonly found in power supplies, industrial motor control, and lighting solutions. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55Ohm @ 4.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 220W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 25 V |
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