FQA85N06
MOSFET N-CH 60V 100A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQA85N06 from the QFET® series is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 60V Drain-Source Voltage (Vdss) and a continuous drain current capability of 100A at 25°C (Tc), with a maximum power dissipation of 214W (Tc). Its low on-resistance, specified at 10mOhm at 50A and 10V Vgs, ensures efficient power handling. The device boasts a typical Gate Charge (Qg) of 112 nC at 10V and an input capacitance (Ciss) of 4120 pF at 25V, facilitating fast switching characteristics. Packaged in a TO-3P through-hole configuration, it operates across a wide temperature range from -55°C to 175°C (TJ). This MOSFET is suitable for power management, motor control, and power supply applications within industrial and automotive sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4120 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
