FQA7N90M
MOSFET N-CH 900V 7A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQA7N90M is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 900V and a continuous Drain Current (Id) of 7A at 25°C, with a maximum power dissipation of 210W. The Rds On is specified at a maximum of 1.8 Ohms at 3.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 52 nC at 10V and an input capacitance (Ciss) of 1880 pF at 25V. The FQA7N90M is housed in a TO-3P package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This device finds application in power supply units, motor control, and lighting systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1880 pF @ 25 V |
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