FQA7N60
MOSFET N-CH 600V 7.7A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQA7N60 is a QFET® series N-Channel Power MOSFET featuring a 600V drain-source breakdown voltage and a continuous drain current capability of 7.7A at 25°C. This through-hole component is housed in a TO-3P package, offering a maximum power dissipation of 152W. Key electrical parameters include a low Rds(on) of 1 Ohm maximum at 3.9A and 10V gate-source voltage, an input capacitance (Ciss) of 1430pF maximum at 25V, and a gate charge (Qg) of 38nC maximum at 10V. The device operates effectively with ±30V Vgs maximum and a typical threshold voltage (Vgs(th)) of 5V at 250µA. The FQA7N60 is utilized in applications such as power supplies, motor control, and lighting.
Additional Information
Series: QFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 152W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 25 V |
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