FQA6N90C-F109
MOSFET N-CH 900V 6A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQA6N90C-F109 is a high-voltage N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 900 V and a continuous Drain Current (Id) of 6 A at 25°C, this component offers robust performance. The device boasts a maximum On-Resistance (Rds On) of 2.3 Ohm at 3 A and 10 V Vgs. With a maximum power dissipation of 198 W (Tc) and a low gate charge of 40 nC, it is suitable for power supply circuits, lighting, and industrial motor control. The TO-3PN package facilitates efficient heat dissipation for through-hole mounting. This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a Vgs(th) of 5 V at 250µA.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 198W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |