FQA65N06
MOSFET N-CH 60V 72A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQA65N06 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 72A at 25°C (Tc), with a maximum power dissipation of 183W (Tc). The low on-resistance of 16mOhm at 36A and 10V gate drive makes it highly efficient. Key parameters include a gate charge (Qg) of 65 nC at 10V and an input capacitance (Ciss) of 2410 pF at 25V. With a maximum gate-source voltage (Vgs) of ±25V and an operating temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for use in power supplies, motor control, and other high-power switching applications. The component is housed in a TO-3P-3, SC-65-3 through-hole package.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 36A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 183W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 25 V |
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