FQA62N25C
MOSFET N-CH 250V 62A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® FQA62N25C is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vds) of 250 V and a continuous drain current (Id) of 62 A at 25°C (Tc). With a low on-resistance (Rds On) of 35 mOhm at 31 A and 10 V, it minimizes conduction losses. The device offers a maximum power dissipation of 298 W (Tc) and a gate charge (Qg) of 130 nC at 10 V. Its high input capacitance (Ciss) is 6280 pF at 25 V. Packaged in a TO-3PN (TO-3P-3, SC-65-3) through-hole configuration, the FQA62N25C operates reliably across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, motor control, and industrial power management systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 298W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6280 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
