FQA5N90
MOSFET N-CH 900V 5.8A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQA5N90 is a QFET® series N-Channel Power MOSFET designed for high voltage applications. This device features a maximum drain-source voltage (Vdss) of 900 V and a continuous drain current (Id) of 5.8 A at 25°C. With a typical gate charge (Qg) of 40 nC at 10 V and a maximum on-resistance (Rds On) of 2.3 Ohms at 2.9 A and 10 V, it offers efficient switching characteristics. The MOSFET is packaged in a TO-3P through-hole configuration, supporting a maximum power dissipation of 185 W at 25°C. Its operating temperature range is -55°C to 150°C. This component finds application in power supply units, lighting, and industrial motor control systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 185W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
