FQA55N25
MOSFET N-CH 250V 55A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQA55N25 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 55A at 25°C. Key performance parameters include a maximum Rds On of 40mOhm at 27.5A and 10V Vgs, and a Gate Charge (Qg) of 180 nC at 10V. The device offers a high power dissipation capability of 310W (Tc). It is packaged in a TO-3PN (TO-3P-3, SC-65-3) through-hole package, suitable for thermal management in high-power systems. Typical operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in industries such as industrial power supplies, motor control, and power factor correction.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 25 V |
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